Three-Dimensional Vertical Memory Comprising Dice with Different Interconnect Levels

ABSTRACT

The present invention discloses a three-dimensional vertical memory (3D-M V ). It comprises at least a 3D-array die and at least a peripheral-circuit die. The 3D-array die comprises a plurality of vertical memory strings. The number of interconnect levels in the peripheral-circuit die is more than the number of interconnect levels in the 3D-array die, but substantially less than the number of memory cells on each of the vertical memory strings in the 3D-array die.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation-in-part of application “DiscreteThree-Dimensional Memory”, application Ser. No. 14/884,755, filed Oct.15, 2015, which is a continuation-in-part of application “DiscreteThree-Dimensional Vertical Memory”, application Ser. No. 14/803,104,filed Jul. 19, 2015, which is a continuation-in-part of application“Discrete Three-Dimensional Vertical Memory”, application Ser. No.14/636,359, filed Mar. 3, 2015, which is a continuation-in-part ofapplication “Discrete Three-Dimensional Memory Comprising Dice withDifferent BEOL Structures”, application Ser. No. 14/047,011, filed Oct.6, 2013, which is a continuation-in-part of application “DiscreteThree-Dimensional Memory Comprising Off-Die Read/Write-VoltageGenerator”, application Ser. No. 13/787,787, filed Mar. 6, 2013, whichis a continuation-in-part of application “Discrete Three-DimensionalMemory”, application Ser. No. 13/591,257, filed Aug. 22, 2012, whichclaims benefit of a provisional application “Three-Dimensional Memorywith Separate Memory-Array and Peripheral-Circuit Substrates”,Application Ser. No. 61/529,929, filed Sep. 1, 2011.

BACKGROUND

1. Technical Field of the Invention

The present invention relates to the field of integrated circuit, andmore particularly to three-dimensional vertical memory (3D-M_(V)).

2. Prior Arts

Three-dimensional memory (3D-M) is a monolithic semiconductor memorycomprising a plurality of vertically stacked memory cells. It includesthree-dimensional read-only memory (3D-ROM) and three-dimensionalrandom-access memory (3D-RAM). The 3D-ROM can be further categorizedinto three-dimensional mask-programmed read-only memory (3D-MPROM) andthree-dimensional electrically-programmable read-only memory (3D-EPROM).3D-M may further be a 3D-memristor, 3D-RRAM or 3D-ReRAM (resistiverandom-access memory), 3D-PCM (phase-change memory), 3D-PMC(programmable metallization-cell memory), or 3D-CBRAM(conductive-bridging random-access memory).

U.S. Pat. No. 5,835,396 issued to Zhang on Nov. 3, 1998 discloses a3D-M, more particularly a 3D-ROM. As illustrated in FIG. 1A, a 3D-M die20 comprises a substrate circuit 0K and a plurality of verticallystacked memory levels 16A, 16B. In this example, the interconnects 0 iinclude metal levels 0M1, 0M2. Hereinafter, the metal levels 0M1, 0M2 inthe interconnects 0 i are referred to as interconnect levels; thematerials used in the interconnects 0 i are referred to as interconnectmaterials.

The memory levels 16A, 16B are stacked above the substrate circuit 0K.They are coupled to the substrate 0 through contact vias (e.g. 1 av).Each of the memory levels (e.g. 16A) comprises a plurality of upperaddress lines (e.g. 2 a), lower address lines (e.g. 1 a) and memorycells (e.g. 5 aa). The memory cells could comprise diodes, transistorsor other devices. Among all types of memory cells, the diode-basedmemory cells are of particular interest because they have the smallestsize of ˜4F², where F is the minimum feature size. Since they aregenerally located at the cross points between the upper and loweraddress lines, the diode-based memory cells form a cross-point array.Hereinafter, diode is broadly interpreted as any two-terminal devicewhose resistance at the read voltage is substantially lower than whenthe applied voltage has a magnitude smaller than or polarity opposite tothat of the read voltage. In other disclosures, diode is also referredto as steering device or selection device. In one exemplary embodiment,diode is a semiconductor diode, e.g. p-i-n silicon diode. In anotherexemplary embodiment, diode is a metal-oxide diode, e.g. titanium-oxidediode, nickel-oxide diode.

The memory levels 16A, 16B collectively form at least a 3D-M array 16,while the substrate circuit 0K comprises the peripheral circuit for the3D-M array 16. A first portion of the peripheral circuit is locatedunderneath the 3D-M array 16 and it is referred to as under-arrayperipheral circuit. A second portion of the peripheral circuit islocated outside the 3D-M array 16 and it is referred to as outside-arrayperipheral circuits 18. Because the outside-array peripheral circuit 18generally comprises fewer back-end-of-line (BEOL) levels than the 3D-Marray 16, the space 17 above the outside-array peripheral circuits 18 isempty and completely wasted. Hereinafter, a BEOL level refers to a levelof conductive lines above the substrate, e.g. an address-line level inthe memory levels 16A, 16B; or, an interconnect level in theinterconnects 0 i. In FIG. 1A, the 3D-M array 16 comprises a total ofsix BEOL levels, including the two interconnect levels 0M1, 0M2, twoaddress-line levels 1 a, 2 a for the first memory level 16A, and twoaddress-line levels 3 a, 4 a for the second memory level 16B. Theoutside-array peripheral circuit 18 comprises only two BEOL levels, i.e.the interconnect levels 0M1, 0M2.

U.S. Pat. No. 7,383,476 issued to Crowley et al. on Jun. 3, 2008discloses an integrated 3D-M die, whose 3D-M arrays and peripheralcircuit are integrated into a single die. Generally, this designmethodology is known as full integration. As is illustrated in FIG. 1B,an integrated 3D-M die 20 comprises a 3D-array region 22 and aperipheral-circuit region 28. The 3D-array region 22 comprises aplurality of 3D-M arrays (e.g. 22 aa, 22 ay) and their decoders (e.g.24, 24G). These decoders include local decoders 24 and global decoders24G. The local decoder 24 decodes address/data for a single 3D-M array,while the global decoder 24G decodes global address/data 25 to each 3D-Marray.

The peripheral-circuit region 28 comprises all necessaryperipheral-circuit components for a standalone integrated 3D-M die 20 toperform basic memory functions, i.e. it can directly use the voltagesupply 23 provided by a user (e.g. a host device or a controller),directly read and/or write data 27 for the user. It includes aread/write-voltage generator (V_(R)/V_(W)-generator) 21 and anaddress/data (A/D)-translator 29. The V_(R)/V_(W)-generator 21 providesread voltage V_(R) and/or write (programming) voltage V_(W) to the 3D-Marray(s). The A/D-translator 29 converts address and/or data from alogical space to a physical space and/or vice versa. Hereinafter, thelogical space is the space viewed from the perspective of a user of the3D-M, while the physical space is the space viewed from the perspectiveof the 3D-M.

The example in FIGS. 1A-1B is a three-dimensional horizontal memory(3D-M_(H)), whose basic storage units are horizontal memory levels. Theabove description can also be applied to a three-dimensional verticalmemory (3D-M_(V)), whose basic storage units are vertical memorystrings.

U.S. Pat. No. 8,638,611 issued to Sim et al. on Jan. 28, 2014 disclosesa 3D-M_(V). It is a vertical-NAND. Besides vertical-NAND, the 3D-ROM,3D-RAM, 3D-memristor, 3D-ReRAM or 3D-RRAM, 3D-PCM, 3D-PMC, 3D-CBRAM canalso be arranged into 3D-M_(V). As illustrated in FIG. 2, a 3D-M_(V) die20 comprises at least a 3D-M_(V) array 16 and a peripheral circuit 18.The 3D-M_(V) array 16 comprises a plurality of vertical memory strings16X, 16Y. Each memory string (e.g. 16X) comprises a plurality ofvertically stacked memory cells (e.g. 8 a-8 h). These memory cells arecoupled by at least a vertical address line. Each memory cell (e.g. 8 f)comprises at least a vertical transistor, with a gate 6, an informationstorage layer 7 and a vertical channel 9. The gate 6 of each memory cell(e.g. 8 f) on a vertical memory string forms a BEOL level. In thisexample, the 3D-M_(V) array 16 comprises eight BEOL levels, i.e. thememory cells 8 a-8 h.

The peripheral circuit 18 for the 3D-M_(V) array 16 comprisestransistors 0 t and interconnects 0 i. The transistors 0 t areconventional (horizontal) transistors formed in the semiconductorsubstrate 0. The interconnects 0 i do not include any memory cells.Similar to 3D-M_(H), the peripheral circuit of 3D-M_(V) could compriseunder-array peripheral-circuit components, as well as outside-arrayperipheral-circuit components. In this example, all peripheral-circuitcomponents are outside the 3D-M_(V) array 16 and the peripheral circuit18 comprises two BEOL levels, i.e. the interconnect levels 0M1, 0M2. Itshould be noted that this 3D-M_(V) is an integrated 3D-M_(V), where the3D-M_(V) array 16 and the peripheral circuit 18 are integrated into asingle 3D-M_(V) die 20.

It is a prevailing belief in the field of integrated circuit that moreintegration is better, because integration lowers cost, improvesperformance and reduces size. However, this belief is no longer true for3D-M_(V). As the 3D-M_(V) 20 is optimized for the 3D-M_(V) array 16, thecost, performance and size of the peripheral circuit 18 are sacrificed.First of all, because the vertical memory strings 16X, 16Y comprisessignificantly more BEOL levels than the peripheral circuit 18, fullintegration would force a relatively simple peripheral circuit 18 to usethe expensive BEOL manufacturing process of the 3D-M_(V) array 16. Thisincreases the overall 3D-M_(V) cost. Secondly, because it comprises onlya small number of interconnect levels (two in FIG. 2), the peripheralcircuit 18 is difficult to design, have a poor performance and occupy alarge area. Thirdly, full integration would force the peripheral circuit18 to use the same high-temperature interconnect materials (e.g.tungsten and/or silicon oxide) as the 3D-M_(V) array 16. These materialsslow down the peripheral circuit 18 and in turn, degrade the overall3D-M_(V) performance.

OBJECTS AND ADVANTAGES

It is a principle object of the present invention to provide athree-dimensional vertical memory (3D-M_(V)) with a lower overall cost.

It is a further object of the present invention to provide a 3D-M_(V)with an improved overall performance.

It is a further object of the present invention to provide a 3D-M_(V)with a smaller overall size.

In accordance with these and other objects of the present invention, adiscrete 3D-M_(V) is disclosed.

SUMMARY OF THE INVENTION

To lower its overall cost, improve its overall performance and reduceits overall size, the present invention follows this design guidelinefor the 3D-M_(V): separate the 3-D circuit and 2-D circuit intodifferent dice in such a way that they could be optimized separately.For example, the 3D-M_(V) array (3-D circuit) and at least aperipheral-circuit component thereof (2-D circuit) are separated intodifferent dice. Accordingly, the present invention discloses a discrete3D-M_(V). It comprises at least a 3D-array die and at least aperipheral-circuit die. The 3D-array die is formed in a 3-D space andcomprises a plurality of functional levels. It comprises at least a3D-M_(V) array and at least a first peripheral-circuit componentthereof, which is referred to as the in-die peripheral-circuitcomponent. The peripheral-circuit die is formed on a 2-D plane andcomprises just a single functional level. It comprises at least a secondperipheral-circuit component of the 3D-M_(V) array, which is referred toas the off-die peripheral-circuit component. This off-dieperipheral-circuit component is an essential circuit for the 3D-M_(V) toperform basic memory functions, e.g. directly using the voltage supplyprovided by a user, directly reading data from the user and/or directlywriting data to the user. It could be a read/write-voltage generator(V_(R)/V_(W)-generator), an address/data translator (A/D-translator), aportion of the V_(R)/V_(W)-generator, and/or a portion of theA/D-translator. Without this off-die peripheral-circuit component, the3D-array die per se is not a functional memory.

Designed and manufactured separately, the 3D-array die and theperipheral-circuit die in a discrete 3D-M_(V) comprise substantiallydifferent back-end-of-line (BEOL) structures. Since the 3D-array die andthe integrated 3D-M_(V) die have similar structures, theperipheral-circuit die (of the discrete 3D-M_(V)) and the integrated3D-M_(V) die have substantially different BEOL structures, too. The BEOLstructures of the peripheral-circuit die could be independentlyoptimized in such a way that the off-die peripheral-circuit componentshave lower cost, better performance and/or smaller size than theircounterparts in the integrated 3D-M_(V). Hence, the discrete 3D-M_(V)has a lower overall cost, a better overall performance and/or a smalleroverall size of than the integrated 3D-M_(V) of the same storagecapacity.

In terms of different BEOL structures, the peripheral-circuit die coulddiffer from the 3D-array die in at least three scenarios. In a firstscenario, the peripheral-circuit die comprises substantially fewer BEOLlevels than the 3D-array die (or, the integrated 3D-M_(V) die). Becausethe wafer cost is roughly proportional to the number of BEOL levels, theperipheral-circuit die would have a much lower wafer cost than the3D-array die and the integrated 3D-M_(V) die. Hence, the total die costof the discrete 3D-M_(V) (including at least two dice: a 3D-array dieand a peripheral-circuit die) is lower than that of the integrated3D-M_(V) (which is a single die comprising both the 3D-M_(V) arrays andthe peripheral circuit). In one preferred embodiment, the number ofmemory cells on a memory string in the 3D-array die is preferably atleast twice as much as the number of interconnect levels in theperipheral-circuit die. This large difference ensures that the reductionin the total die cost (from the integrated 3D-M_(V) to the discrete3D-M_(V)) could offset the extra bonding cost (for two separate dice inthe discrete 3D-M_(V)). As a result, the discrete 3D-M_(V) has a loweroverall cost than the integrated 3D-M_(V) for a given storage capacity.

In a second scenario, the peripheral-circuit die comprises moreinterconnect levels than the 3D-array die (or, the integrated 3D-M_(V)die). Accordingly, the off-die peripheral-circuit components of thediscrete 3D-M_(V) are easier to design, have better performance andoccupy less die area than their counterparts in the integrated 3D-M_(V).Hence, the discrete 3D-M_(V) has a better overall performance and asmaller overall size then the integrated 3D-M_(V). Similar to theintegrated 3D-M_(V), the interconnects of the 3D-array die do notinclude any memory structures. The number of interconnect levels in the3D-array die is the larger of its under-array peripheral-circuitcomponents and its outside-array peripheral-circuit components. Itshould be reminded that, although a large number is desired, the numberof the interconnect levels in the peripheral-circuit die is stillbounded by the overall cost of the discrete 3D-M_(V). To ensure that thediscrete 3D-M_(V) has a lower overall cost than the integrated 3D-M_(V),the peripheral-circuit die should comprise substantially fewer BEOLlevels than the 3D-array die (referring to the first scenario). Forexample, the number of interconnect levels in the peripheral-circuit dieis substantially less than the number of memory cells on a memory stringin the 3D-array die.

In a third scenario, the peripheral-circuit die comprises differentinterconnect materials than the 3D-array die (or, the integrated3D-M_(V) die). To be more specific, the peripheral-circuit die comprisehigh-speed interconnect materials (e.g. copper and/or high-kdielectric), whereas the 3D-array die and the integrated 3D-M_(V) diecomprise high-temperature interconnect materials (e.g. tungsten and/orsilicon oxide). Because the high-speed interconnect materials aregenerally faster than the high-temperature interconnect materials, theoff-die peripheral-circuit components of the discrete 3D-M_(V) have afaster speed than their counterparts in the integrated 3D-M_(V). Hence,the discrete 3D-M_(V) has a better overall performance than theintegrated 3D-M_(V).

Accordingly, the present invention discloses a discrete 3D-M_(V),comprising: a 3D-array die comprising at least a 3D-M_(V) array, whereinsaid 3D-M_(V) array comprises a plurality of vertical memory strings,each of said vertical memory strings comprising a plurality ofvertically stacked memory cells; a peripheral-circuit die comprising atleast an off-die peripheral-circuit component of said 3D-M_(V) array,wherein said off-die peripheral-circuit component is absent from said3D-array die; means for coupling said 3D-array die and saidperipheral-circuit die; wherein the number of memory cells on each ofsaid vertical memory strings in said 3D-array die is at least twice asmuch as the number of interconnect levels in said peripheral-circuitdie; and, said 3D-array die and said peripheral-circuit die are separatedice.

The present invention further discloses another discrete 3D-M_(V),comprising: a 3D-array die comprising at least a 3D-M_(V) array, whereinsaid 3D-M_(V) array comprises a plurality of vertical memory strings,each of said vertical memory strings comprising a plurality ofvertically stacked memory cells; a peripheral-circuit die comprising atleast an off-die peripheral-circuit component of said 3D-M_(V) array,wherein said off-die peripheral-circuit component is absent from said3D-array die; means for coupling said 3D-array die and saidperipheral-circuit die; wherein the number of interconnect levels insaid peripheral-circuit die is more than the number of interconnectlevels in said 3D-array die, but substantially less than the number ofmemory cells on each of said vertical memory strings in said 3D-arraydie; and, said 3D-array die and said peripheral-circuit die are separatedice.

The present invention further discloses yet another discrete 3D-M_(V),comprising: a 3D-array die comprising at least a 3D-M_(V) array and anin-die peripheral-circuit component of said 3D-M_(V) array, wherein said3D-M_(V) array comprises a plurality of vertical memory strings, each ofsaid vertical memory strings comprising a plurality of verticallystacked memory cells; a peripheral-circuit die comprising at least anoff-die peripheral-circuit component of said 3D-M_(V) array, whereinsaid off-die peripheral-circuit component is absent from said 3D-arraydie; means for coupling said 3D-array die and said peripheral-circuitdie; wherein said off-die peripheral-circuit component and said in-dieperipheral-circuit component comprise different interconnect materials;and, said 3D-array die and said peripheral-circuit die are separatedice.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional views of an integrated three-dimensionalhorizontal memory (3D-M_(H)) (prior art); FIG. 1B is a block diagram ofan integrated 3D-M_(H) die (prior art);

FIG. 2 is a cross-sectional view of an integrated three-dimensionalvertical memory (3D-M_(V)) (prior art);

FIGS. 3A-3D illustrate four preferred discrete 3D-M_(V)'s;

FIG. 4A is a cross-sectional view of a preferred 3D-array die; FIG. 4Bis a cross-sectional view of a preferred peripheral-circuit die;

FIGS. 5A-5B disclose a first preferred partitioning scheme;

FIGS. 6A-6B disclose a second preferred partitioning scheme;

FIGS. 7A-7C disclose a third preferred partitioning scheme;

FIGS. 8A-8B disclose a fourth preferred partitioning scheme;

FIGS. 9A-9B are block diagrams of two preferred peripheral-circuit dicesupporting multiple 3D-array dice;

FIGS. 10A-10B are cross-sectional views of two preferred discrete3D-M_(V) packages; FIG. 10C is a cross-sectional view of a preferreddiscrete 3D-M_(V) module;

FIGS. 11A-11C are block diagrams of three preferred read/write-voltagegenerators;

FIG. 12A is a block diagram of a preferred address translator; FIG. 12Bis a block diagram of a preferred data translator.

It should be noted that all the drawings are schematic and not drawn toscale. Relative dimensions and proportions of parts of the devicestructures in the figures have been shown exaggerated or reduced in sizefor the sake of clarity and convenience in the drawings. The samereference symbols are generally used to refer to corresponding orsimilar features in the different embodiments.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Those of ordinary skills in the art will realize that the followingdescription of the present invention is illustrative only and is notintended to be in any way limiting. Other embodiments of the inventionwill readily suggest themselves to such skilled persons from anexamination of the within disclosure.

In the present invention, the symbol “/” means a relationship of “and”or “or”. For example, the read/write-voltage generator(V_(R)/V_(W)-generator) could generate either only the read voltage, oronly the write voltage, or both the read voltage and the write voltage.In another example, the address/data (A/D)-translator could translateeither only address, or only data, or both address and data.

Referring now to FIGS. 3A-3D, four preferred discrete three-dimensionalvertical memory (3D-M_(V)) 50 are disclosed. The discrete 3D-M_(V) 50includes a physical interface 54 according to a standard for connectingto a variety of hosts. Physical interface 54 includes individualcontacts 52 a, 52 b, 54 a-54 d that connect with corresponding contactsin a host receptacle. The power-supply contact 52 a is provided toconnect to a power-supply contact in the host receptacle. The voltagesupplied by the host to power-supply contact 52 a is referred to asvoltage supply V_(DD). The ground contact 52 b provides a groundconnection at a voltage V_(SS). The contacts 54 a-54 d provide signalconnections between the host and the discrete 3D-M_(V) 50. The signalsrepresented on the contacts 54 a-54 d include address and data, amongothers. Because they are directly to/from the host, the address and datarepresented on the contacts 54 a-54 d are logical address and logicaldata.

The discrete 3D-M_(V) 50 comprises at least a 3D-array die 30 and atleast a peripheral-circuit die 40/40*. In these figures, at least anoff-die peripheral-circuit component of the 3D-M_(V) is located on theperipheral-circuit die 40/40* instead of the 3D-array die 30. Thisoff-die peripheral circuit is an essential circuit for the 3D-M_(V) toperform basic memory functions, e.g. directly using the voltage supplyprovided by a user, directly reading data from the user and/or directlywriting data to the user. It could be a read/write-voltage generator(V_(R)/V_(W)-generator), an address/data translator (A/D-translator), aportion of the V_(R)/V_(W)-generator, and/or a portion of theA/D-translator. Without this off-die peripheral circuit, the 3D-arraydie 30 per se is not a functional memory.

The preferred discrete 3D-M_(V) 50 in FIG. 3A is in the form of a memorycard. Its peripheral-circuit die 40 comprises an off-dieV_(R)/V_(W)-generator, which receives a voltage supply V_(DD) from thepower-supply contact 52 a and provides the 3D-array die 30 with at leasta read/write voltage through a power bus 56. The read/write voltageincludes at least a read voltage and/or a write voltage other than thevoltage supply V_(DD). In other words, it could be either at least aread voltage V_(R), or at least a write voltage V_(W), or both readvoltage V_(R) and write voltage V_(W), and the values of these readvoltages and write voltages are different from the voltage supplyV_(DD). In this preferred embodiment, the read/write voltage includesone read voltage V_(R) and two write voltages V_(W1), V_(W2).Alternatively, it could include more than one read voltage or more thantwo write voltages.

The preferred discrete 3D-M_(V) 50 in FIG. 3B is also in the form of amemory card. Its peripheral-circuit die 40* comprises an off-dieA/D-translator, which includes an address converter and/or a dataconverter. The address converter converts the logical addressrepresented on the contacts 54 a-54 d to the physical addressrepresented on an internal bus 58 and/or vice versa; the data converterconverts the logical data represented on the contacts 54 a-54 d to thephysical data represented on an internal bus 58 and/or vice versa. TheA/D-translator could convert address only, data only, or both addressand data.

The preferred discrete 3D-M_(V) 50 in FIG. 3C is also in the form of amemory card. It comprises two peripheral-circuit dice: aperipheral-circuit die A 40 and a peripheral-circuit die B 40*. Theperipheral-circuit die A 40 comprises an off-die V_(R)/V_(W)-generatorand the peripheral-circuit die B 40* comprises an off-dieA/D-translator.

The preferred discrete 3D-M 50 in FIG. 3D can be used for ahigh-capacity memory card or a solid-state drive. It comprises twoperipheral-circuit dice 40, 40* and a plurality of 3D-array dice 30 a,30 b . . . 30 w. The peripheral-circuit die A 40 comprises an off-dieV_(R)/V_(W)-generator and the peripheral-circuit die B 40* comprises anoff-die A/D-translator. The 3D-array dice form two channels: Channel Aand Channel B. The internal bus 58A on Channel A provides physicaladdress/data to the 3D-array dice 30 a, 30 b . . . 30 i, while theinternal bus 58B on Channel B provides physical address/data to the3D-array dice 30 r, 30 s . . . 30 w. The power bus 56 provides theread/write-voltages to all 3D-array dice 30 a, 30 b . . . 30 w. Althoughtwo channels are used in this example, it should be apparent to thoseskilled in the art that more than two channels may be used.

Referring now to FIG. 4A, a cross-sectional view of a preferred 3D-arraydie 30 is disclosed. It comprises at least a 3D-M_(V) array 36 and anin-die peripheral-circuit component 38. The 3D-M_(V) array 36 is formedin a 3-D space and comprises a plurality of vertical memory strings(e.g. 16X, 16Y). Each memory string (e.g. 16Y) comprises a plurality ofvertically stacked memory cells (e.g. 8 a-8 h). Each memory cell (e.g. 8f) comprises at least a vertical transistor, with gate 6, informationstorage layer 7 and channel 9. An exemplary memory cell is avertical-NAND cell. The memory cell (e.g. 8 f) is formed at theintersection of a horizontal address line (e.g. 6) and a verticaladdress line (e.g. 9). Hereinafter, the address lines at the samehorizontal level as a specific horizontal address line form anaddress-line level. Because each horizontal address line is the gate ofa memory cell, the number of address-line levels is equal to the numberof memory cells on a vertical memory string. In this example, the numberof memory cells on a vertical memory string (or, the number ofaddress-line levels) is eight, i.e. 8 a-8 h. A real-world 3D-M_(V) arraycould comprise 24 or more memory cells on a vertical memory string (or,address-line levels).

The in-die peripheral circuit 38 comprises transistors 0 t andinterconnects 0 i. As the interconnects of the 3D-array die 30 includethe BEOL structures above the substrate 0 except all memory structures,the interconnects 0 i in the in-die peripheral circuit 38 of FIG. 4A arealso the interconnects of the 3D-array die 30. On the other hand,because the in-die peripheral circuit 38 could comprise under-arrayperipheral-circuit components and outside-array peripheral-circuitcomponents, the number of interconnect levels in the 3D-array die 30 isthe larger of the under-array peripheral-circuit components and theoutside-array peripheral-circuit components. In this example, the numberof interconnect levels in the 3D-aray die 30 is two, i.e. 0M1, 0M2.

Because the processing steps of the 3D-M_(V) array 36 and the in-dieperipheral-circuit component 38 are generally incompatible, the totalnumber of BEOL levels in the 3D-array die 30 would be equal to the sumof the number of its address-line levels (or, the number of memory cellson a vertical memory string) and the number of its interconnect levels.In this case, the total number of BEOL levels in the 3D-arry die 30 isten, including eight address-line levels 8 a-8 h and two interconnectlevels 0M1-0M2.

Although the cross-sectional view of FIG. 4A is similar to that of FIG.2, the peripheral circuit 18 of FIG. 2 comprises all peripheral-circuitcomponents of the integrated 3D-M_(V) 20, whereas at least oneperipheral-circuit component of the discrete 3D-M_(V) 30 is absent fromthe in-die peripheral circuit 38 of FIG. 4A. For example, at least aV_(R)/V_(W)-generator and/or an A/D-translator is absent from the in-dieperipheral circuit 38. Further details on the in-die peripheral circuit38 are disclosed in FIGS. 5A-8B.

Referring now to FIG. 4B, a cross-sectional view of a preferredperipheral-circuit die 40 is disclosed. The peripheral-circuit die 40 isformed on a 2-D plane and includes a single functional level, i.e. thesubstrate circuit 0K′. The substrate circuit 0K′ comprises transistors 0t′ and interconnects 0 i′. As the peripheral-circuit die 40 does notcomprise any memory structures, its BEOL levels are same as itsinterconnect levels. In this example, the number of BEOL levels (or,interconnect levels) in the peripheral-circuit die 40 is four, i.e.0M1′-0M4′.

In the preferred embodiments of FIGS. 4A-4B, the number of BEOL levels(10) in the 3D-array die 30 is substantially more than the number of theBEOL levels (4) in the peripheral-circuit die 40. A more stringentrequirement is that the number of memory cells on a vertical memorystring (8) in the 3D-array die 30 is at least twice as much as thenumber of interconnect levels in the peripheral-circuit die 40. Becausethe manufacturing cost of an integrated circuit is roughly proportionalto the number of its BEOL levels, the peripheral-circuit die 40 has amuch lower wafer cost than the 3D-array die 30. This cost reduction issufficient to offset the extra bonding cost required by the discrete3D-M_(V). Accordingly, the discrete 3D-M_(V) 50 has a lower overall costthan the integrated 3D-M_(V) 20.

Furthermore, because the peripheral-circuit die 40 comprises moreinterconnect levels (4 vs. 2) than the in-die peripheral circuit 18 ofthe integrated 3D-M_(V) die 20, the off-die peripheral-circuitcomponents in the peripheral-circuit die 40 are easier to design, have abetter performance and occupy less die area than its counterpart in theintegrated 3D-M_(V) die 20. Note that, although it comprises moreinterconnect levels (4 vs. 2) than the 3D-array die 30, theperipheral-circuit die 40 still comprises significantly fewer BEOLlevels (4 vs. 10) than the 3D-array die 30.

In addition, because its BEOL process does not have to go through anyhigh-temperature BEOL processing steps, the peripheral-circuit die 40may use high-speed interconnect materials for its interconnects 0 i′(e.g. copper and/or low-k dielectric). These high-speed interconnectmaterials can improve the performance of the peripheral-circuit die 40,as well as the overall 3D-M_(V) performance.

For a conventional two-dimensional memory (2D-M, whose memory cells arearranged on a 2-D plane, e.g. flash memory), although it is technicallypossible to form at least a peripheral-circuit component in aperipheral-circuit die instead of a 2D-array die, doing so will raisethe overall cost, degrade the overall performance and increase theoverall size. This is because the 2D-array die and theperipheral-circuit die have similar BEOL structures, similar wafer costsand similar performance. Adding the extra bonding cost and delay, adiscrete 2D-M has a higher cost, a slower speed and a larger size thanan integrated 2D-M. This is in sharp contrast to the 3D-M_(V). The3D-array die 30 and peripheral-circuit die 40 of a discrete 3D-M_(V) 50have substantially different BEOL structures (e.g. different number ofBEOL levels, different number of interconnect levels, differentinterconnect materials). As a result, a discrete 3D-M_(V) has a loweroverall cost, a better overall performance and a smaller overall sizethan an integrated 3D-M_(V).

Different from the integrated 3D-M_(V) 20, at least a peripheral-circuitcomponent of the discrete 3D-M_(V) 50 is located on theperipheral-circuit die 40 instead of the 3D-array die 30. In otherwords, the peripheral-circuit components of 3D-M_(V) are partitionedbetween the 3D-array die 30 and the peripheral-circuit die 40. Severalpreferred partitioning schemes are disclosed in FIGS. 5A-9B.

FIGS. 5A-5B disclose a first preferred partitioning scheme. The discrete3D-M_(V) 50 comprises a 3D-array die 30 and a peripheral-circuit die 40.In FIG. 5A, the 3D-array die 30 comprises a plurality of 3D-M_(V) arrays(e.g. 22 aa, 22 ay) and decoders. It also comprises an in-dieV_(R)/V_(W)-generator 41. In FIG. 5B, the peripheral-circuit die 40comprises at least an off-die A/D-translator 49, which is absent fromthe 3D-array die 30 of FIG. 5A. Without the A/D-translator 49, the3D-array die 30 of FIG. 5A is not a functional memory per se but has ahigher array efficiency. Alternatively, the 3D-array die 30 comprises anin-die A/D-translator, while the peripheral-circuit die 40 comprises anoff-die V_(R)/V_(W)-generator, which is absent from the 3D-array die 30.Similarly, without the V_(R)/V_(W)-generator, the 3D-array die 30 ofFIG. 5A is not a functional memory per se but has a higher arrayefficiency.

FIGS. 6A-6B disclose a second preferred partitioning scheme. Thediscrete 3D-M_(V) 50 comprises a 3D-array die 30 and aperipheral-circuit die 40. In FIG. 6A, the 3D-array die 30 comprises the3D-M_(V) arrays (e.g. 22 aa, 22 ay) and their decoders, but does notcomprise the V_(R)/V_(W)-generator 41 and the A/D-translator 49. In FIG.6B, the peripheral-circuit die 40 comprises not only the A/D-translator49, but also the V_(R)/V_(W)-generator 41. The 3D-array die 30 of FIG.6A has a very high array efficiency. This leads to a substantially loweroverall cost for the discrete 3D-M_(V).

FIGS. 7A-7C disclose a third preferred partitioning scheme. The discrete3D-M_(V) 50 comprises a 3D-array die 30, two peripheral-circuit dice 40,40*. The 3D-array die 30 comprises 3D-M_(V) arrays (e.g. 22 aa, 22 ay)and their decoders, but does not comprise the V_(R)/V_(W)-generator 41and the A/D-translator 49 (FIG. 7A). The V_(R)/V_(W)-generator 41 andthe A/D-translator 49 are located on separate dice: theV_(R)/V_(W)-generator 41 is located on the peripheral-circuit die A 40(FIG. 7B); the A/D-translator 49 is located on the peripheral-circuitdie B 40* (FIG. 7C). As is well known to those skilled in the art, theV_(R)/V_(W)-generator is an analog-intensive circuit, whereas theA/D-translator is a digital-intensive circuit. Because they are locatedon separate dice, these circuits can be optimized independently: theperipheral-circuit die A 40 is optimized for analog performance, whereasthe peripheral-circuit die B 40* is optimized for digital performance.

FIGS. 8A-8B disclose a fourth partitioning scheme. It is similar tothose in FIGS. 6A-6B except that the 3D-array die 30 further comprises afirst serializer-deserializer (SerDes) 47 (FIG. 8A). It convertsparallel digital signals (e.g. address/data/command/status) inside the3D-array die 30 to serial digital signals outside the 3D-array die 30and vice versa. In the mean time, the peripheral-circuit die 40 comprisea second serializer-deserializer (SerDes) 47′ (FIG. 8B). It convertsparallel digital signals (e.g. address/data/command/status) inside theperipheral-circuit die 40 to serial digital signals outside theperipheral-circuit die 40 and vice versa. By serializing digitalsignals, the number of bond wires (or, solder bumps) can be reducedbetween the 3D-array die 30 and the peripheral-circuit die 40. Thishelps to lower the bonding cost.

Referring now to FIGS. 9A-9B, two preferred peripheral-circuit dice 40supporting multiple 3D-array dice are illustrated. Theperipheral-circuit die 40 of FIG. 9A comprises a plurality ofA/D-translators 49 a, 49 b . . . 49 w (or, V_(R)/V_(W)-generators). EachA/D-translator (e.g. 49 a) translates address/data for an associated3D-array die (e.g. 30 a of FIG. 3D). The preferred peripheral-circuitdie 40 of FIG. 9B further comprises a plurality ofV_(R)/V_(W)-generators 41 a, 41 b . . . 41 w. Each V_(R)/V_(W)-generator(e.g. 41 a) provides read/write-voltages to an associated 3D-array die(e.g. 30 a of FIG. 3D).

Referring now to FIG. 10A-10C, several preferred discrete 3D-M_(V)packages (or, module) 60 are disclosed. The 3D-M_(V) packages in FIGS.10A-10B are multi-chip package (MCP), while the 3D-M_(V) module in FIG.10C is a multi-chip module (MCM). These MCP's and MCM's can be used as amemory card and/or a solid-state drive.

The preferred discrete 3D-M_(V) package 60 of FIG. 10A comprises twoseparate dice: a 3D-array die 30 and a peripheral-circuit die 40. Thesedice 30, 40 are vertically stacked on a package substrate 63 and locatedinside a package housing 61. Bond wires 65 provide electrical connectionbetween the dice 30 and 40. Here, bond wire 65 provides a coupling meansbetween the 3D-array die 30 and the peripheral-circuit die 40. Otherexemplary coupling means include solder bump. To ensure data security,the dice 30, 40 are preferably encapsulated into a molding compound 67.In this preferred embodiment, the 3D-array die 30 is vertically stackedabove the peripheral-circuit die 40. Alternatively, theperipheral-circuit die 40 can be vertically stacked above the 3D-arraydie 30; or, the 3D-array die 30 can be stacked face-to-face towards theperipheral-circuit die 40; or, the 3D-array die 30 can be mountedside-by-side with the peripheral-circuit die 40.

The preferred discrete 3D-M_(V) package 60 of FIG. 10B comprises two3D-array dice 30 a, 30 b and a peripheral-circuit die 40. These dice 30a, 30 b, 40 are three separate dice. They are located inside a packagehousing 61. The 3D-array die 30 a is vertically stacked on the 3D-arraydie 30 b, and the 3D-array die 30 b is vertically stacked on theperipheral-circuit die 40. Bond wires 65 provide electrical connectionsbetween the dice 30A, 30B, and 40.

The preferred discrete 3D-M_(V) module 60 of FIG. 10C comprises a moduleframe 76, which houses two discrete packages, i.e. a 3D-array package 72and a peripheral-circuit package 74. The 3D-array package 72 comprisestwo 3D-array dice 30 a, 30 b, while the peripheral-circuit package 74comprises a peripheral-circuit die 40. The module frame 76 provideselectrical connections between the 3D-array package 72 and theperipheral-circuit package 74 (not drawn in this figure).

Referring now to FIGS. 11A-11C, three preferred voltage generators 41are disclosed. The voltage generator 41 preferably uses a DC-to-DCconverter. It could be a step-up, whose output voltage is higher thanthe input voltage, or a step-down, whose output voltage is lower thanthe input voltage. Examples of step-up include charge pump (FIG. 11A)and boost converter (FIG. 11B), and examples of step-down include lowdropout (FIG. 11C) and buck converter.

In FIG. 11A, the voltage generator 41 includes a charge pump 71 toprovide an output voltage V_(out) that is higher than the input voltageV_(in). The voltage generator 41 may include one or more integratedcircuits and also include one or more discrete devices. Charge pump 71may generally be formed having a low profile that fits within thephysical constraints of low-profile memory cards.

In FIG. 11B, the voltage generator 41 is a high frequency boostconverter 73. It may also be used to generate an output voltage V_(out)that is higher than an input voltage V_(in). A boost converter may beformed with a low profile inductor so that the profile of theV_(R)/V_(W)-generator is within the limits for a memory card or asolid-state drive.

In FIG. 11C, the voltage generator 41 includes a low dropout (LDO) 75 toprovide an output voltage V_(out) that is lower than the input voltageV_(in). Generally, an LDO uses one or more (in this case, two)capacitors. Thus, the V_(R)/V_(W)-generator may be comprised of at leastone die and may also include one or more discrete devices.

Referring now to FIGS. 12A-12B, components of an A/D-translator 49, i.e.address translator 43 and data translator 45, are disclosed. FIG. 12Adiscloses a preferred address translator 43. It converts the logicaladdress 54A it receives from the host to the physical address 58A of a3D-array die. The address translator 43 comprises a processor 92 and amemory 94. The memory 94 preferably stores an address mapping table 82,a faulty block table 84 and others. These tables are permanently storedin a read-only memory (ROM), which could a non-volatile memory (NVM)such as flash memory. During operation, these tables are loaded into arandom-access memory (RAM) for faster access. When a singleA/D-translator die 40* supports multiple 3D-array dice (e.g. 30 a, 30 b. . . 30 w, as shown in FIG. 2C), the memory 94 stores tables for all3D-array dice supported by the A/D-translator die 40*. In other words,the memory 94 is shared by all 3D-array dice 30 a, 30 b . . . 30 w.

FIG. 12B discloses a preferred data translator 45. It converts thelogical data it receives from the host to the physical data of a3D-array die, or converts the physical data of a 3D-array die to thelogical data it outputs to the host. The data translator 45 comprises anECC-encoder 96 and an ECC-decoder 98. The ECC-encoder 96 encodes theinput logical data 54D to the physical data 58D, which are to be storedin the 3D-M_(V) array. The ECC-decoder 98 decodes the physical data 58Dretrieved from the 3D-M_(V) array to the output logical data 54D. Duringthis process, the error bits in the physical data 58D are detected andcorrected. The ECC coding algorithms that are suitable for the 3D-M_(V)include Reed-Solomon coding, Golay coding, BCH coding, Multi-dimensionalparity coding, Hamming coding and others.

While illustrative embodiments have been shown and described, it wouldbe apparent to those skilled in the art that may more modifications thanthat have been mentioned above are possible without departing from theinventive concepts set forth therein. The invention, therefore, is notto be limited except in the spirit of the appended claims.

What is claimed is:
 1. A three-dimensional vertical memory (3D-M_(V)),comprising: a 3D-array die comprising at least a 3D-M_(V) array, whereinsaid 3D-M_(V) array comprises a plurality of vertical memory strings,each of said vertical memory strings comprising a plurality ofvertically stacked memory cells; a peripheral-circuit die comprising atleast an off-die peripheral-circuit component of said 3D-M_(V) array,wherein said off-die peripheral-circuit component is absent from said3D-array die; means for coupling said 3D-array die and saidperipheral-circuit die; wherein the number of interconnect levels insaid peripheral-circuit die is more than the number of interconnectlevels in said 3D-array die, but substantially less than the number ofmemory cells on each of said vertical memory strings in said 3D-arraydie; and, said 3D-array die and said peripheral-circuit die are separatedice.
 2. The memory according to claim 1, wherein said 3D-M_(V) is avertical-NAND.
 3. The memory according to claim 1, wherein said 3D-M_(V)is a three-dimensional read-only memory (3D-ROM).
 4. The memoryaccording to claim 1, wherein said 3D-M_(V) is a vertical-NAND, athree-dimensional random-access memory (3D-RAM).
 5. The memory accordingto claim 1, wherein said 3D-M_(V) is a 3D-memristor.
 6. The memoryaccording to claim 1, wherein said 3D-M_(V) is a 3D-RRAM or 3D-ReRAM(resistive random-access memory).
 7. The memory according to claim 1,wherein said 3D-M_(V) is a 3D-PCM (phase-change memory).
 8. The memoryaccording to claim 1, wherein said 3D-M_(V) is a 3D-PMC (programmablemetallization-cell memory).
 9. The memory according to claim 1, whereinsaid 3D-M_(V) is a 3D-CBRAM (conductive-bridging random-access memory).10. The memory according to claim 1, wherein said 3D-array die and saidperipheral-circuit die are located in a memory package.
 11. The memoryaccording to claim 1, wherein said 3D-array die and saidperipheral-circuit die are located in a memory module.
 12. The memoryaccording to claim 1, wherein said 3D-array die and saidperipheral-circuit die are located in a memory card.
 13. The memoryaccording to claim 1, wherein said 3D-array die and saidperipheral-circuit die are located in a solid-state drive.
 14. Thememory according to claim 1, further comprising another 3D-array dieincluding at least another 3D-M_(V) array, wherein saidperipheral-circuit die comprises at least another portion of anotheroff-die peripheral-circuit component for said another 3D-array die. 15.The memory according to claim 1, wherein said off-die peripheral-circuitcomponent is a read-voltage generator.
 16. The memory according to claim1, wherein said off-die peripheral-circuit component is a write-voltagegenerator.
 17. The memory according to claim 1, wherein said off-dieperipheral-circuit component is an address translator.
 18. The memoryaccording to claim 1, wherein said off-die peripheral-circuit componentis a data translator.